So the drain current will become constant.
end and it does not allow further increase of drain. When VDS = VP the channel is effectively closed at drain. drain end is gradually increased and drain current also. source end and so the depletion layer is wider at. Now reverse bias at the drain end is larger than. (ii) When drain-source voltage (VDS) is applied at constant gate-source voltage (VGS) :. When VGS=VGS(off), depletion layer will touch each other and channel will totally removed. 
0V > VGS > VGS(off), depletion layers are also increased and
When VGS = 0v, two depletion layers & channel are formed normally. (i) When gate-source voltage(VGS) is applied and drain-source voltage is zero i.e. It is always operated with Gate-Source p-n junction in reverse bias. In JFETs, the width of a junction is used to control the effective crosssectional area of the channel through which current conducts. 
JFET is a unipolar device,as current conduction is due to only one type charge carriers. Because of reverse bias it has high input impedance. input voltage (VGS) control the output current (ID). JFET is a voltage controlled device i.e. and drain, sandwiched between the two gates. Channel: The region between the source. heavily doped impurity regions to create two. Gate: There are two internally connected. majority carriers leave from the channel, is. Drain: The terminal, through which the. majority carriers enter into the channel, is. Source: The terminal through which the. current conducted by one type of carrier i.e. 
Junction Field Effect Transistor is a three terminal semiconductor device in which.Junction Field Effect Transistor (JFET) OUTLINE Low noise level than ordinary transistor And Junction Field Effect Transistor (JFET) is a type of FET.It has considerable noise level To overcome this problem Field effect transistor (FET) is introduced because of its:.INTRODUCTION The ordinary or bipolar transistor has two main disadvantage. Junction Field Effect Transistor (JFET).
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